190V N-Channel MOSFET/Diode Measures 2 mm x 2 mm x 0.75 mm January 12, 2009
Embarking as the industry's first 190V n-channel power MOSFET with a co-packaged, 190V power diode, the SiA850DJ measures 2 mm x 2 mm x 0.75 mm and also claims to be the industry's first such device with an on-resistance rating at 1.8V VGS. Typical applications will include boost dc/dc converters for high-voltage piezoelectric motors and OLED backlighting. The device offers on-resistance values from 17 Ohms at 1.8V VGS to 3.8V at 4.5V VGS and specifies a diode forward voltage of 1.2V at 0.5A. The SiA850DJ is lead and halogen free and RoHS-compliant. Pricing starts at $0.17 each/100,000. VISHAY INTERTECHNOLOGY INC., Malvern, PA. (408) 567-8347.
