Bipolar Transistors Ramp Up Efficiency Levels March 12, 2007
Dubbed "breakthrough in small signal" (BISS) transistors, the company's latest generation of low VCEsat transistors claims to deliver ultra-low saturation voltages for high efficiency in medium-power applications. Saturation voltage is below 60 mV at 1A. Specifying a maximum collector current of 5.8A, the third-generation BISS transistors employ mesh-emitter technology to reduce RCEsat and to support higher current capabilities. Typical applications include medium-power dc/dc conversion, load switches, high-side switches, motor drivers, backlight inverters, strobe flash units, and battery chargers. The transistors are available now in three plastic surface-mount packages: 6-lead SOT457, 3-lead SOT89 with collector pad, and a 4-lead SOT223 with a heatsink. NXP SEMICONDUCTORS, USA. (800) 447-1500.
