SEMICONDUCTORS
SPOTLIGHT
Advanced Linear Devices
ALD114804/804A and ALD114904/904A
QUICK TAKE:
Advanced Linear Devices (ALD) has announced a family of ultra-precise depletion mode MOSFET arrays. The devices enable breakthrough precision in controlling gate threshold and sub-threshold voltage characteristics in circuits with power supplies less than 1V.
ADVANCED LINEAR DEVICES INC.,
Sunnyvale, CA. (408) 747-1155
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More Info:
Designated as Quad/Dual N-Channel Depletion Mode EPAD Matched Pair MOSFET Arrays (ALD114804/ALD114804A and ALD114904/ALD114904A), the devices feature a matched gate threshold voltage of -0.4V ±0.020V for the A-suffix grade and –0.4V ±0.04V for the standard grade. With zero applied input voltage (0V at the gate terminal) the drain provides a sink current of 20 µA. These devices could also be used in the sub-threshold mode and operated with nano-amperes of operating current. This precision threshold voltage enables circuits to run below 0.7V threshold barriers. These devices also offer tight offset voltage matching and control.
Enter No. 110 at www.eepn.com
WHY ARE THESE DEVICES IMPORTANT?
A breakthrough in MOSFET technology, these devices support zero-power operation and enable a new level of precision in circuit design.
TYPICAL APPLICATIONS
Normally on without applied power, these devices are well-suited for fail-safe circuits in alarms, battery backup circuits, energy harvesting, alternative energy and many other applications. With applied power, these MOSFET arrays enable circuits to operate in the normally off mode with practically zero power consumption. They are well-suited for many secondary power backup systems that must function without drawing power from the secondary power source, and they serve as ideal, low-power replacements for form-C electro-mechanical relays. They also exhibit controlled sub-threshold characteristics, making them suited for a broad range of analog applications such as current sources, differential amplifier input stages, transmission gates and multiplexer applications typically used in RF, oscillator and nanopower circuits.
ABOUT EPAD TECHNOLOGY
The EPAD Depletion Mode MOSFET devices were developed using ALD's patented EPAD CMOS technology. EPAD is an acronym for Electrically Programmable Analog Device—a patented and trademarked technology developed by ALD to precisely trim a variety of CMOS analog integrated circuit elements. Once trimmed, the device voltage and current characteristics are stored indefinitely in the chip even when the power to the chip is removed. Programming or trimming is achieved through a series of software controlled injected voltage charge packets to a floating gate structure.
PRICING AND AVAILABILITY
The MOSFET arrays are available now from stock in both sample and production quantities, as quad and dual devices in PDIP and SOIC packages. Pricing starts at $0.91 each/1,000.
ON THE WEB
For more information, check out www.aldinc.com.
