Flash Memory Chip Is User-Configurable September 2004 Issue Published Date: September 22, 2004
High-performance processors and memory controllers are targeted applications for the W78M64-XSBX 64MB 3V flash memory chip. It can be user configured in three ways: 8 MB x 64, 2 banks of 8 MB x 32 or 4 banks of 8 MB x 16. Access times are 70, 90, 100 and 120 ns. Simultaneous read/write functionality enables eight continuous reads from one bank while executing erase/program functions in another bank, with zero latency switching from read to write operations. Four separate banks allow up to two simultaneous operations per device. Each sector supports one million erase/program cycles. The memory is powered by a single 3.3V supply for both read and write operations. I/O voltage options are 1.8V and 3V. The device is packaged in a 159-lead plastic ball-grid array (PBGA) that occupies a footprint of 286 mm² and measures 13 mm x 22 mm. High-reliability military and aerospace versions are available. Price is $300 each/1,000 (military temperature grade). WHITE ELECTRONIC DESIGNS CORP., Phoenix, AZ. (602) 437-1520
