SiGe Transistors Achieve Low Noise Figure March 2003 Issue Published Date: March 01, 2003
The company's latest SiGe transistors achieve what is claimed as the industry's lowest noise figure and performance levels comparable to more expensive GaAs devices. With a VCEO of 3V, the ultra-low noise type transistor provides a noise figure of 0.52 dB operating at 2V/10 mA/2 GHz. The ultra-high frequency type provides a noise figure of 0.62 dB when operating at 2V/5 mA/2 GHz and 1.16 dB when operating at 2V/5 mA/5.2 GHz. With applications in GPS and WLANs, the transistors come in a four-pin TESQ package measuring 1.2 mm x 1.2 mm x 0.52 mm. With production volumes scheduled for September, samples of the new transistors are available now priced at $0.42 each. For further information, contact TOSHIBA AMERICA ELECTRONIC COMPONENTS INC., Irvine, CA. (800) 879-4963.
