RF Power Transistor Family Claimed As Industry’s Coolest March 2003 Issue Published Date: March 01, 2003
Wireless base station power amplifier manufacturers, including 2G, 2.5G and 3G OEMs, represent the primary market targeted by a new family of power transistors that is said to deliver about a 10% greater efficiency and 10%-15% lower operating temperature than competitive devices. Marking the semiconductor company's entrance into the power amp mart, the new power transistor line is said to derive from breakthroughs in laterally diffused metal oxide semiconductor (LDMOS) technology, such as elimination of defects in chips when making ultra-thin silicon wafers and through use of high-density, low-resistance electrical connections. The RF power transistor family currently embraces 21 high-voltage, gold-metallized MOSFETs that are said to hold the promise for cooler, smaller, less expensive wireless base stations. Among the advanced features claimed for the devices are a best-in-class thermal resistance, a high gain, linearity and efficiency, and integrated ESD protection. Prices for the transistors range all the way from $12 to $207 each/10,000. For more information, contact AGERE SYSTEMS INC., Allentown, PA. (800) 372-2447.
