Next Gen FCRAM Raises Performance Bar March 2002 Issue Published Date: March 01, 2002
The companyÕs second-generation fast cycle random access memory (FCRAM) devices feature performance improvements such as faster access times, shorter random cycle times, and higher bandwidths. The TC59LM806CFT and TC59LM814CFT deliver speeds up to 200 MHz, a random cycle time of 25 ns, and a bandwidth of 400 Mb/s. Offered in x8 and x16 configurations, they operate on 2.5V and are available with different functions including variable write length. Pinout and I/O interface are compatible with standard DDR SDRAMs. Housed in TSOP2s, single-unit pricing is $60. TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC., Irvine, CA. (949) 455-2000.
