SiGe Transistors Reduce Power Consumption November 2001 Issue Published Date: November 01, 2001
A family of silicon germanium (SiGe) heterojunction bipolar transistors (HBT) are designed to reduce power consumption and improve reliability of full-featured portable communications devices. The line-up of SiGe-based RFICs will initially include the MT4S100U, a high-frequency transistor, and the MT4S101U, a high-power gain transistor. The MT4S100U maintains a VCEO of 3.5V and achieves a noise level of 0.7 dB at 2 GHz. The MT4S101U features an insertion gain of 17.5 dB at 20 mA. Both come in a 4-pin surface mount package. Sample pricing is $0.30 each. TOSHIBA AMERICA ELECTRONIC COMPONENTS INC., Irvine, CA. (949) 455-2000.
